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Atomfair Hafnium, tetrakis(dimethylamino)- C8H24HfN4

Description Hafnium, tetrakis(dimethylamino)- (CAS No. 19782-68-4) is a highly specialized organometallic compound with the molecular formula C8H24HfN4. This high-purity hafnium precursor is widely utilized in advanced material synthesis and thin-film deposition processes, particularly in semiconductor and nanotechnology applications. As a tetrakis(dimethylamido)hafnium(IV) complex, it exhibits excellent volatility and thermal stability, making it ideal for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of hafnium-containing films. Our product is rigorously synthesized and purified to meet the exacting standards of research and industrial applications, ensuring consistent performance in sensitive processes. Available in secure, moisture-resistant packaging under inert atmosphere to maintain purity and…

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Description

Description

Hafnium, tetrakis(dimethylamino)- (CAS No. 19782-68-4) is a highly specialized organometallic compound with the molecular formula C8H24HfN4. This high-purity hafnium precursor is widely utilized in advanced material synthesis and thin-film deposition processes, particularly in semiconductor and nanotechnology applications. As a tetrakis(dimethylamido)hafnium(IV) complex, it exhibits excellent volatility and thermal stability, making it ideal for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of hafnium-containing films. Our product is rigorously synthesized and purified to meet the exacting standards of research and industrial applications, ensuring consistent performance in sensitive processes. Available in secure, moisture-resistant packaging under inert atmosphere to maintain purity and shelf stability.

  • CAS No: 19782-68-4
  • Molecular Formula: C8H24HfN4
  • Molecular Weight: 354.79
  • Exact Mass: 356.14666
  • Monoisotopic Mass: 356.14666
  • IUPAC Name: dimethylazanide;hafnium(4+)
  • SMILES: C[N-]C.C[N-]C.C[N-]C.C[N-]C.[Hf+4]
  • Synonyms: Hafnium, tetrakis(dimethylamino)-, 19782-68-4, 19962-11-9, Tetrakis(dimethylamido)hafnium(IV), DTXSID50173490

Application

This compound serves as a critical precursor for depositing hafnium-based thin films in microelectronics, particularly for high-k dielectric applications in next-generation semiconductor devices. It enables precise control of film composition and morphology in ALD and CVD processes for advanced logic and memory chips. Researchers also employ it in the development of novel catalytic systems and ceramic materials requiring hafnium incorporation.

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