Your cart is currently empty!

Atomfair Hafnium silicide (HfSi2) HfSi2 CAS 12401-56-8
Hafnium Silicide (HfSi2) is an advanced inorganic compound composed of hafnium and silicon, known for its exceptional thermal stability and electrical conductivity. This high-purity material is synthesized under controlled conditions to ensure minimal impurities, making it ideal for demanding applications in semiconductor manufacturing, thin-film deposition, and high-temperature environments. With a molecular formula of HfSi2and CAS number 12401-56-8, our Hafnium Silicide powder is available in various particle sizes and purities to meet specific research and industrial requirements. Its unique properties, including resistance to oxidation and excellent adhesion to substrates, make it a preferred choice for cutting-edge technologies. Each batch undergoes rigorous…
Description
Hafnium Silicide (HfSi2) is an advanced inorganic compound composed of hafnium and silicon, known for its exceptional thermal stability and electrical conductivity. This high-purity material is synthesized under controlled conditions to ensure minimal impurities, making it ideal for demanding applications in semiconductor manufacturing, thin-film deposition, and high-temperature environments. With a molecular formula of HfSi2 and CAS number 12401-56-8, our Hafnium Silicide powder is available in various particle sizes and purities to meet specific research and industrial requirements. Its unique properties, including resistance to oxidation and excellent adhesion to substrates, make it a preferred choice for cutting-edge technologies.
Each batch undergoes rigorous quality control, including XRD and SEM analysis, to guarantee consistency and performance. Suitable for use in sputtering targets, diffusion barriers, and as a precursor in chemical vapor deposition (CVD), this material is packaged under inert conditions to preserve its integrity. Researchers and engineers can rely on our Hafnium Silicide for reproducible results in advanced material science and nanotechnology applications.
Properties
- CAS Number: 12401-56-8
- InChI: InChI=1S/Hf.2Si
- InChI Key: TWRSDLOICOIGRH-UHFFFAOYSA-N
- Exact Mass: 235.90041
- Molecular Formula: HfSi2
- Molecular Weight: 234.66
- SMILES: [Si].[Si].[Hf]
- Monoisotopic Mass: 235.90041
- Synonyms: Hafnium silicide, 12401-56-8, Hafnium silicide (HfSi2), EINECS 235-640-1, DTXCID201436981, DTXSID301014380, hafnium;silicon, Hafnium disilicide, TWRSDLOICOIGRH-UHFFFAOYSA-N, MFCD00167026, Chromium Sulfide (Cr2S3) Sputtering Targets, Q26841176
Application
Hafnium Silicide (HfSi2) is widely used in the semiconductor industry as a conductive material for integrated circuits and microelectronics due to its low resistivity and compatibility with silicon substrates. It serves as an effective diffusion barrier in metallization processes, preventing unwanted reactions between layers in electronic devices. Additionally, its thermal stability makes it suitable for high-temperature coatings and protective layers in aerospace and energy applications.
If you are interested or have any questions, please contact us at support@atomfair.com
Disclaimer: Sold exclusively for laboratory research. Prohibited for commercial use, diagnostics, or human/animal applications. Buyers assume all compliance liability.
Only logged in customers who have purchased this product may leave a review.
Related products
-
Atomfair (2S)-2-amino-6-((2,2,2-trifluoroacetyl)amino)hexanoic acid H-Lys(Tfa)-OH, TfAcK, e-TFA-lysine C8H13F3N2O3 CAS 10009-20-8
-
Atomfair (Phenylamino)methanesulfonic acid C7H9NO3S CAS 103-06-0
-
Atomfair 1-(2-Bromo-4-fluorophenyl)ethan-1-one 2′-Bromo-4′-fluoroacetophenone C8H6BrFO CAS 1006-39-9
-
Atomfair 1-(2-Bromo-4-methylphenyl)ethan-1-one C9H9BrO CAS 103286-27-7
-
Atomfair 1-(2-Bromo-5-fluorophenyl)ethan-1-one C8H6BrFO CAS 1006-33-3
Reviews
There are no reviews yet.