Description

Hafnium Oxide (HfO₂) is a high-purity inorganic compound widely used in advanced technological applications due to its exceptional thermal stability, high dielectric constant, and chemical inertness. This white crystalline powder is available in various particle sizes, including nanopowder (~100 nm), and is offered in purities ranging from 98% to ≥99.95% (metals basis). Hafnium oxide is a critical material in semiconductor manufacturing, serving as a high-κ dielectric in CMOS devices and gate oxides. Its high refractive index and transparency to infrared light make it valuable for optical coatings and lenses. The material is also utilized in thermal barrier coatings, nuclear reactor control rods, and as a catalyst support. Our HfO₂ is rigorously tested for trace metal impurities (Zr < 0.5%) and is available in multiple forms including pellets (9-13 mm diameter) and -325 mesh powder.

Properties

• CAS Number: 12055-23-1
• Complexity: 18.3
• IUPAC Name: dioxohafnium
• InChI: InChI=1S/Hf.2O
• InChI Key: CJNBYAVZURUTKZ-UHFFFAOYSA-N
• Exact Mass: 211.93639
• Molecular Formula: HfO2
• Molecular Weight: 210.48
• SMILES: O=[Hf]=O
• Topological: 34.1
• Monoisotopic Mass: 211.93639
• Physical Description: Dry Powder, Other Solid; Dry Powder
• Synonyms: 12055-23-1, Hafnium oxide (HfO2), DTXSID70893204, DTXCID40113209, Hafnium oxide, Hafnium(IV) oxide, dioxohafnium, Hafnium dioxide, Hafnia, 37230-85-6, MFCD00003565, Hafnotrast, Hafnia (HfO2), Hafnium Oxide Powder, HAFNIUMOXIDE, Hafnium dioxide (HfO2), Hafnium(IV) Oxide, Lump, UNII-3C4Z4KG52T, SCHEMBL24169, Niobium Carbide (NbC) Powder, Hafnium(IV) oxide, powder, 98%, EINECS 235-013-2, Hafnium(IV) oxide, >=99.95%, NSC158931, AKOS015903694, Hafnium oxide nanopowder (~100 nm), NSC 158931, Hafnium(IV) oxide, Spectrographic Grade, CS-0198879, NS00130065, D95076, EC 235-013-2, Q418740, Hafnium(IV) oxide, pellets, diam. x thickness 13 mm x 5 mm, Hafnium(IV) oxide, pellets, diam. x thickness 9 mm x 4.2 mm, Hafnium oxide powder, – 325 mesh approx 99.9% purity (metals basis) Zr < 0.5%

Hafnium oxide is primarily employed as a high-κ dielectric in MOSFET transistors, replacing silicon dioxide to enable continued device miniaturization. In optics, HfO₂ thin films are used for anti-reflective coatings and laser components due to their broad transparency range (UV to IR). The material’s neutron absorption properties make it suitable for nuclear reactor control rods. Additionally, HfO₂ serves as a protective thermal barrier coating in aerospace applications and as a precursor for hafnium-based ceramics.

Safety and Hazards

GHS Hazard Statements

• Not Classified
• Reported as not meeting GHS hazard criteria by 337 of 344 companies (only 2% companies provided GHS information). For more detailed information, please visit ECHA C&L website.

Hazard Classes and Categories

• Not Classified

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Disclaimer: Sold exclusively for laboratory research. Prohibited for commercial use, diagnostics, or human/animal applications. Buyers assume all compliance liability.