Description

Hafnium Ethoxide (CAS No. 13428-80-3) is a high-purity metal-organic compound with the molecular formula C₈H₂₀HfO₄, also known as Tetraethoxyhafnium or Hafnium(IV) ethoxide. This alkoxide derivative of hafnium is a valuable precursor in materials science, particularly for the synthesis of hafnium-based thin films and nanostructured materials via sol-gel processes, chemical vapor deposition (CVD), and atomic layer deposition (ALD). Its high reactivity with water and oxygen makes it ideal for producing ultra-pure hafnium oxide (HfO₂), a high-κ dielectric material used in advanced semiconductor devices. Supplied as a moisture-sensitive solid or solution, it is rigorously packaged under inert gas to ensure stability and longevity. Suitable for researchers and industrial applications requiring precise control over hafnium incorporation in ceramics, coatings, and electronic components.

Properties

• CAS Number: 13428-80-3
• Complexity: 2.8
• IUPAC Name: ethanolate;hafnium(4+)
• InChI: InChI=1S/4C2H5O.Hf/c4*1-2-3;/h4*2H2,1H3;/q4*-1;+4
• InChI Key: BFIMXCBKRLYJQO-UHFFFAOYSA-N
• Exact Mass: 360.08272
• Molecular Formula: C8H20HfO4
• Molecular Weight: 358.73
• SMILES: CC[O-].CC[O-].CC[O-].CC[O-].[Hf+4]
• Topological: 92.2
• Monoisotopic Mass: 360.08272
• Synonyms: HAFNIUM ETHOXIDE, 13428-80-3, ethanolate;hafnium(4+), hafnium(IV) ethoxide, Tetraethoxyhafnium, hafnium tetraethoxide, SCHEMBL103619, DTXSID90431329, BFIMXCBKRLYJQO-UHFFFAOYSA-N, AKOS025294327, H20652

Application

Hafnium Ethoxide is widely used as a precursor for depositing hafnium oxide (HfO₂) thin films in microelectronics, particularly as high-κ gate dielectrics in transistors. It is also employed in sol-gel synthesis of hafnium-containing ceramics and nanocomposites for optical and refractory applications. Researchers utilize it in ALD/CVD processes to create corrosion-resistant coatings or catalytic materials. Its moisture sensitivity allows for controlled hydrolysis in nanomaterial fabrication.

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