Description

Bis[(3,4-dicarboxylic anhydride)phenyl] terephthalate (CAS: 21117-79-3) is a high-purity aromatic dianhydride ester compound with the molecular formula C₂₄H₁₀O₁₀. This specialized chemical is widely utilized in advanced polymer synthesis, particularly in the production of high-performance polyimides and polyamide-imides due to its rigid, thermally stable structure. The IUPAC name bis(1,3-dioxo-2-benzofuran-5-yl) benzene-1,4-dicarboxylate reflects its dual phthalic anhydride functionality linked via a terephthalate core. Offered as a fine crystalline powder with ≥98% purity (HPLC), it is packaged under inert gas to prevent moisture absorption. Ideal for research into heat-resistant coatings, dielectric materials, and aerospace-grade composites. Storage recommendations: -20°C under argon, in amber glass vials.

Properties

• CAS Number: 21117-79-3
• Complexity: 843
• IUPAC Name: bis(1,3-dioxoisobenzofuran-5-yl) benzene-1,4-dicarboxylate
• InChI: InChI=1S/C24H10O10/c25-19(31-13-5-7-15-17(9-13)23(29)33-21(15)27)11-1-2-12(4-3-11)20(26)32-14-6-8-16-18(10-14)24(30)34-22(16)28/h1-10H
• InChI Key: JMHUKWKCCHMXEL-UHFFFAOYSA-N
• Exact Mass: 458.02739651
• Molecular Formula: C24H10O10
• Molecular Weight: 458.3
• SMILES: C1=CC(=CC=C1C(=O)OC2=CC3=C(C=C2)C(=O)OC3=O)C(=O)OC4=CC5=C(C=C4)C(=O)OC5=O
• Topological: 139
• Monoisotopic Mass: 458.02739651
• Synonyms: 21117-79-3, bis[(3,4-dicarboxylic anhydride)phenyl] terephthalate, Bis(1,3-dioxo-1,3-dihydroisobenzofuran-5-yl) terephthalate, SCHEMBL4204276, bis[(3,4-dicarboxylic anhydride) phenyl]terephthalate (PHAP)

Application

This compound serves as a critical monomer for synthesizing thermally stable polyimide resins used in flexible printed circuits and microelectronic encapsulation. The dual anhydride groups enable copolymerization with diamines to create high-Tg polymers with exceptional mechanical strength. Researchers employ it to develop advanced composites for jet engine components and radiation-resistant materials. Its extended aromatic structure contributes to low dielectric constants in next-generation semiconductor insulators.

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