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Atomfair 6N High Purity Intrinsic Silicon Sputtering Target (P-Type/N-Type/Undoped)
Ultra-high purity (99.9999% or 6N) intrinsic silicon sputtering targets available in P-type, N-type, and undoped variants. Precision-engineered for thin film deposition applications with multiple diameter and thickness options. Ideal for semiconductor, photovoltaic, and research applications requiring controlled resistivity.
Description
Ultra-high purity (99.9999% or 6N) intrinsic silicon sputtering targets available in P-type, N-type, and undoped variants. Precision-engineered for thin film deposition applications with multiple diameter and thickness options. Ideal for semiconductor, photovoltaic, and research applications requiring controlled resistivity.
| Type | Diameter (mm) | Thickness (mm) | Resistivity | Package |
|---|---|---|---|---|
| P-Type Silicon | 50.8 | 3 | <0.0001 ฮฉยทcm | 1 pc per pack |
| 50.8 | 4 | <0.0001 ฮฉยทcm | ||
| 50.8 | 5 | <0.0001 ฮฉยทcm | ||
| 50.8 | 6 | <0.0001 ฮฉยทcm | ||
| P-Type Silicon | 50.8 | 3 | 1-10 ฮฉยทcm | |
| 50.8 | 4 | 1-10 ฮฉยทcm | ||
| 50.8 | 5 | 1-10 ฮฉยทcm | ||
| 50.8 | 6 | 1-10 ฮฉยทcm | ||
| N-Type Silicon | 50.8 | 3 | <0.0001 ฮฉยทcm | |
| 50.8 | 4 | <0.0001 ฮฉยทcm | ||
| 50.8 | 5 | <0.0001 ฮฉยทcm | ||
| 50.8 | 6 | <0.0001 ฮฉยทcm | ||
| N-Type Silicon | 50.8 | 3 | 1-10 ฮฉยทcm | |
| 50.8 | 4 | 1-10 ฮฉยทcm | ||
| 50.8 | 5 | 1-10 ฮฉยทcm | ||
| 50.8 | 6 | 1-10 ฮฉยทcm | ||
| Intrinsic Silicon | 50.8 | 3 | – | |
| 50.8 | 4 | – | ||
| 50.8 | 5 | – | ||
| 50.8 | 6 | – | ||
| 60 | 3 | – | ||
| 60 | 4 | – | ||
| 60 | 5 | – | ||
| 60 | 6 | – | ||
| Intrinsic Silicon | 76.2 | 3 | – | |
| 76.2 | 4 | – | ||
| 76.2 | 5 | – | ||
| 76.2 | 6 | – | ||
| 76.2 | 3 | >30 ฮฉ | ||
| 76.2 | 4 | >30 ฮฉ | ||
| 76.2 | 5 | >30 ฮฉ | ||
| 76.2 | 6 | >30 ฮฉ |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
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