Description

1. Core Advantages
Adaptability to Long-Wavelength Infrared Light: It compensates for the limitation of the AlGaAs/GaAs system (with a maximum emission wavelength of approximately 860 nm). It can be used to fabricate lasers, light-emitting diodes (LEDs), and multi-junction solar cells with an emission wavelength exceeding 900 nm, meeting the application demands for long-wavelength infrared light.
Strain Compensation Optimization: Based on the concept of strain balance, the InGaAs/GaAsP strain-compensated multi-quantum well structure has been developed. By alternately growing epitaxial layers with tensile strain and compressive strain, the lattice constant of the entire structure matches that of the substrate, and the band structure conforms to the designed emission performance, significantly improving the optoelectronic properties of devices.
2. Technical Characteristics
There is an inherent lattice mismatch between this material and GaAs substrates. To ensure structural stability and device performance, strain compensation technologies (such as growing strained epitaxial layers) are required for regulation, which imposes high precision requirements on the fabrication process.
3. Application Fields
It is suitable for scenarios including long-wavelength infrared laser devices (e.g., infrared detection, infrared communication), multi-junction solar cells, and high-power long-wavelength lasers.