Description

1. Core Advantages
Mainstream Material for Red Lasers: InGaAlP is a direct wide-bandgap quaternary material and currently serves as the mainstream core material for red lasers, with mature technological applications.
Controllable Lattice Matching: By adjusting the compositions of indium (In), aluminum (Al), and gallium (Ga), lattice matching with GaAs substrates can be achieved, ensuring the structural stability of devices.
Wide Emission Wavelength Range: Its emission range covers red, orange, yellow, and yellow-green wavelength bands. It is widely used in 650nm red lasers and visible light-emitting diodes (LEDs), meeting the needs of multi-color optoelectronic devices.
2. Technical Characteristics
Small Conduction Band Offset: The conduction band offset of the heterojunction is less than 350meV (the value of AlGaAs materials). The relatively low electron potential barrier easily leads to leakage current, resulting in an increase in the laser threshold current. This characteristic becomes more pronounced in high-temperature and high-current operating environments.
High Thermal Resistance: The AlGaInP layer exhibits scattering in the alloy, leading to higher thermal resistance than AlGaAs materials. During operation, excessive heat is prone to accumulate, which further causes an increase in junction temperature and cavity surface temperature. This results in a lower characteristic temperature of the device, low electro-optical conversion efficiency during continuous operation, and significant heat generation.
3. Application Fields
It is suitable for scenarios such as 650nm red lasers (e.g., laser heads for CD/DVD optical drives, red indicator laser pointers) and visible light-emitting diodes (e.g., outdoor displays, landscape lighting LEDs).