Atomfair 6 inch diameter Silicon Carbide (SiC) Substrate

A large-format 6-inch SiC substrate available in P-type (4H/6H) and N-type (3C) configurations. Designed for industrial and research applications with stringent quality requirements. Features low micropipe density and high resistivity tolerance.

Description

A large-format 6-inch SiC substrate available in P-type (4H/6H) and N-type (3C) configurations. Designed for industrial and research applications with stringent quality requirements. Features low micropipe density and high resistivity tolerance.

Parameter Z Grade P Grade D Grade
Diameter 145.5mm~150.0mm 145.5mm~150.0mm 145.5mm~150.0mm
Thickness 350ยตmยฑ25ยตm 350ยตmยฑ25ยตm 350ยตmยฑ25ยตm
Micropipe Density 0cmโปยฒ 0cmโปยฒ 0cmโปยฒ
Resistivity (P-type) โ‰ค0.1ฮฉยทcm โ‰ค0.3ฮฉยทcm โ‰ค0.1ฮฉยทcm
Resistivity (N-type) โ‰ค0.8mฮฉยทcm โ‰ค1mฮฉยทcm โ‰ค0.8mฮฉยทcm
LTV/TTV/Bow/Warp โ‰ค2.5ยตm/โ‰ค5ยตm/โ‰ค15ยตm/โ‰ค30ยตm โ‰ค10ยตm/โ‰ค15ยตm/โ‰ค25ยตm/โ‰ค40ยตm โ‰ค2.5ยตm/โ‰ค5ยตm/โ‰ค15ยตm/โ‰ค30ยตm
Surface Roughness (Polish) Raโ‰ค1nm Raโ‰ค1nm Raโ‰ค1nm
Surface Roughness (CMP) Raโ‰ค0.2nm Raโ‰ค0.5nm Raโ‰ค0.2nm

If you are interested or have any questions, please contact us at inquiry@atomfair.com

Disclaimer: Sold exclusively for laboratory research.