Description
A large-format 6-inch SiC substrate available in P-type (4H/6H) and N-type (3C) configurations. Designed for industrial and research applications with stringent quality requirements. Features low micropipe density and high resistivity tolerance.
| Parameter | Z Grade | P Grade | D Grade |
|---|---|---|---|
| Diameter | 145.5mm~150.0mm | 145.5mm~150.0mm | 145.5mm~150.0mm |
| Thickness | 350µm±25µm | 350µm±25µm | 350µm±25µm |
| Micropipe Density | 0cm⁻² | 0cm⁻² | 0cm⁻² |
| Resistivity (P-type) | ≤0.1Ω·cm | ≤0.3Ω·cm | ≤0.1Ω·cm |
| Resistivity (N-type) | ≤0.8mΩ·cm | ≤1mΩ·cm | ≤0.8mΩ·cm |
| LTV/TTV/Bow/Warp | ≤2.5µm/≤5µm/≤15µm/≤30µm | ≤10µm/≤15µm/≤25µm/≤40µm | ≤2.5µm/≤5µm/≤15µm/≤30µm |
| Surface Roughness (Polish) | Ra≤1nm | Ra≤1nm | Ra≤1nm |
| Surface Roughness (CMP) | Ra≤0.2nm | Ra≤0.5nm | Ra≤0.2nm |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
