Description
A high-quality 4H-SiC single crystal substrate with P-type doping, ideal for high-power and high-temperature applications. It features excellent thermal conductivity and breakdown electrical field properties. Suitable for III-V nitride deposition and optoelectronic devices.
| Property | Value |
|---|---|
| Lattice Parameters | a=3.082A, c=10.092A |
| Stacking Sequence | ABCB |
| Mohs Hardness | ≈9.2 |
| Density | 3.23g/cm³ |
| Thermal Expansion Coefficient | 4.3×10⁻⁶/K(⊥Caxis), 4.7×10⁻⁶/K(Caxis) |
| Refraction Index @750nm | no=2.621, ne=2.671 |
| Dielectric Constant | c~9.66 |
| Thermal Conductivity | 3-5W/cm·K@298K |
| Band-Gap | 3.26eV |
| Break-Down Electrical Field | 2-5×10⁶V/cm |
| Saturation Drift Velocity | 2.0×10⁵m/s |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
