Your cart is currently empty!
Atomfair 4H P-Type Silicon Carbide Substrate
A high-quality 4H-SiC single crystal substrate with P-type doping, ideal for high-power and high-temperature applications. It features excellent thermal conductivity and breakdown electrical field properties. Suitable for III-V nitride deposition and optoelectronic devices.
Description
A high-quality 4H-SiC single crystal substrate with P-type doping, ideal for high-power and high-temperature applications. It features excellent thermal conductivity and breakdown electrical field properties. Suitable for III-V nitride deposition and optoelectronic devices.
| Property | Value |
|---|---|
| Lattice Parameters | a=3.082A, c=10.092A |
| Stacking Sequence | ABCB |
| Mohs Hardness | โ9.2 |
| Density | 3.23g/cmยณ |
| Thermal Expansion Coefficient | 4.3ร10โปโถ/K(โฅCaxis), 4.7ร10โปโถ/K(Caxis) |
| Refraction Index @750nm | no=2.621, ne=2.671 |
| Dielectric Constant | c~9.66 |
| Thermal Conductivity | 3-5W/cmยทK@298K |
| Band-Gap | 3.26eV |
| Break-Down Electrical Field | 2-5ร10โถV/cm |
| Saturation Drift Velocity | 2.0ร10โตm/s |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
Related products
-
Atomfair 10*10mm Silicon Carbide (SiC) Substrate
-
Atomfair 2 inch diameter Silicon Carbide (SiC) Substrate
-
Atomfair 2-inch GaN Single Crystal Wafer (N-type) GaN-FS 2 inchโค2cm-2 400ยฑ50 ฮผm C-axis(0001)ยฑ0.5ยฐ TTV โค15ฮผm BOWโค20ฮผm
-
Atomfair 2-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 2 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low
-
Atomfair 2-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 2 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low