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Atomfair 4 inch diameter Silicon Carbide (SiC) Substrate
A 4-inch SiC substrate available in P-type (4H/6H) and N-type (3C) configurations. Suitable for industrial and research applications with moderate quality requirements. Offers balanced performance and cost-effectiveness.
Description
A 4-inch SiC substrate available in P-type (4H/6H) and N-type (3C) configurations. Suitable for industrial and research applications with moderate quality requirements. Offers balanced performance and cost-effectiveness.
| Parameter | Z Grade | P Grade |
|---|---|---|
| Diameter | 99.5mm~100.0mm | 99.5mm~100.0mm |
| Thickness | 350ยตmยฑ25ยตm | 350ยตmยฑ25ยตm |
| Micropipe Density | 0cmโปยฒ | 0cmโปยฒ |
| Resistivity (P-type) | โค0.1ฮฉยทcm | โค0.3ฮฉยทcm |
| Resistivity (N-type) | โค0.8mฮฉยทcm | โค1mฮฉยทcm |
| LTV/TTV/Bow/Warp | โค2.5ยตm/โค5ยตm/โค15ยตm/โค30ยตm | โค10ยตm/โค15ยตm/โค25ยตm/โค40ยตm |
| Surface Roughness (Polish) | Raโค1nm | Raโค1nm |
| Surface Roughness (CMP) | Raโค0.2nm | Raโค0.5nm |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
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