Description
A 4-inch SiC substrate available in P-type (4H/6H) and N-type (3C) configurations. Suitable for industrial and research applications with moderate quality requirements. Offers balanced performance and cost-effectiveness.
| Parameter | Z Grade | P Grade |
|---|---|---|
| Diameter | 99.5mm~100.0mm | 99.5mm~100.0mm |
| Thickness | 350µm±25µm | 350µm±25µm |
| Micropipe Density | 0cm⁻² | 0cm⁻² |
| Resistivity (P-type) | ≤0.1Ω·cm | ≤0.3Ω·cm |
| Resistivity (N-type) | ≤0.8mΩ·cm | ≤1mΩ·cm |
| LTV/TTV/Bow/Warp | ≤2.5µm/≤5µm/≤15µm/≤30µm | ≤10µm/≤15µm/≤25µm/≤40µm |
| Surface Roughness (Polish) | Ra≤1nm | Ra≤1nm |
| Surface Roughness (CMP) | Ra≤0.2nm | Ra≤0.5nm |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
