Indium Phosphide (InP) is a binary semiconductor of indium and phosphorus, with a face-centered cubic (“zincblende”) crystal structure—same as GaAs and most III-V semiconductors. Synthesizable via white phosphorus-indium iodide reaction at 400°C, high-temperature/pressure element combination, or trialkylindium-phosphine thermal decomposition, it excels in high-power/high-frequency electronics (superior electron velocity vs. Si/GaAs), enabling 604GHz pseudomorphic heterojunction bipolar transistors. With a direct bandgap for optoelectronics like laser diodes, it’s key for photonic ICs in optical communication (WDM) and serves as a substrate for InGaAs-based optoelectronics. Available in 2”, 3”, 9”.
| Property | Value |
|---|---|
| Material | Zn-doped InP |
| Diameter | 76.2mm±0.25mm |
| Type | P-type |
| Carrier Concentration | (0.6-2)×1018 cm-3 |
| Mobility | 50-90 cm2/V·s |
| Resistivity | 70-90 Ω·cm |
| Dislocation Density | <6×103 cm-2 |
| Orientation | (100) |
| Thickness | 600±25μm |
| Surface | Single/Double side polished |
