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Atomfair 3″ Undoped InSb Single Crystal Wafer Undoped InSb76.2±0.3mm600±25μm N-type <3x1015 cm-3<2x10² cm-2 0.17 eV 78,000 cm²/V·s
Indium Antimonide (InSb) is a crystalline compound of indium (In) and antimony (Sb), boasting stable physicochemical properties and excellent process compatibility. As a III-V narrow-bandgap semiconductor, it’s ideal for infrared detectors—used in thermal imagers, FLIR systems, infrared-guided missile systems, and infrared astronomy—with sensitivity to 1-5μm wavelengths. It was widely applied in legacy single-detector mechanical scanning thermal imaging systems and also serves as a terahertz radiation source (a strong photo-Dember emitter). Available in 2”, 3”, 5” sizes.
Description
| Property | Value |
|---|---|
| Material | Undoped InSb |
| Diameter | 76.2±0.3mm |
| Thickness | 600±25μm |
| Conductivity Type | N-type |
| Carrier Concentration | <3×1015 cm-3 |
| Dislocation Density | <2×102 cm-2 |
| Bandgap (300K) | 0.17 eV |
| Electron Mobility (RT) | 78,000 cm2/V·s |
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