Description
| Property | Value |
|---|---|
| Material | Undoped InAs |
| Diameter | 76.2mm±0.25mm |
| Type | N-type |
| Carrier Concentration | 5×1016 cm-3 |
| Mobility | ≥2×104 cm2/V·s |
| Dislocation Density | <5×104 cm-2 |
| Orientation | (100) |
| Thickness | 600±25μm |
| Surface | Single/Double side polished |
Atomfair 3″ Undoped InAs Single Crystal Wafer Undoped InAs76.2mm±0.25mm N-type 5×1016 cm-3≥2×104 cm²/V·s<5x104 cm-2(100) 600±25μm SSP/DSP
We offer 2”, 3”, 4” Indium Arsenide (InAs) single-crystal wafers—gray cubic crystalline semiconductors composed of indium and arsenic, with a melting point of 942℃. As a direct bandgap material (similar to GaAs), InAs features high electron mobility and a narrow bandgap. It’s ideal for 1-3.9μm infrared detectors (e.g., photovoltaic photodiodes, usable at room temperature for high-power apps or cooled for low noise), diode lasers, and terahertz radiation sources (as a strong photo-Amber emitter). It also works with InP or alloys with GaAs to form InGaAs.
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