A compound of gallium and arsenic, our GaAs wafer is a III-V direct-bandgap semiconductor with a zinc blende crystal structure. It’s ideal for manufacturing microwave ICs, MMICs, IR LEDs, laser diodes, solar cells, and optical windows. As a high-quality substrate, it enables epitaxial growth of other III-V semiconductors like InGaAs and AlGaAs, meeting rigorous standards for optoelectronic and high-frequency applications.
| Property | Value |
|---|---|
| Crystal Material | Single Crystal Gallium Arsenide, VGF/LEC grown |
| Orientation | (100) or (111) a°±β° |
| Doping | Si/Te |
| Diameter | 76.2mm±0.25mm |
| Thickness | 350±25um / 550±25um / 625±25um |
| Etch Pit Density | ≤5.10 cm⁻² |
| Primary Flat | (0-1-1)±0.5deg, 22±1.0mm |
| Secondary Flat | (0-1 1)±5.0 deg, 11±1.0mm |
| Front Surface | Polished in Epi-ready Prime grade |
| Back Surface | Polished / Lapping or Etched |
| Epi-ready | Yes |
