Description
| Property | Value |
|---|---|
| Growth Method | VGF |
| Dopant | Ga |
| Conductivity Type | P-type |
| Diameter | 76.2±0.3mm |
| Orientation | (100)±0.5° or (111)±0.5° |
| Resistivity | Customizable |
| Dislocation Density | 500 or 5000 cm-2 |
| Thickness | 175±25μm or 500±25μm |
| TTV | ≤10μm |
| Warp | ≤15μm |
| Surface | E/E, P/E, P/G |

