We offer 2”, 3”, 4” Indium Arsenide (InAs) single-crystal wafers—gray cubic crystalline semiconductors composed of indium and arsenic, with a melting point of 942℃. As a direct bandgap material (similar to GaAs), InAs features high electron mobility and a narrow bandgap. It’s ideal for 1-3.14μm infrared detectors (e.g., photovoltaic photodiodes, usable at room temperature for high-power apps or cooled for low noise), diode lasers, and terahertz radiation sources (as a strong photo-Amber emitter). It also works with InP or alloys with GaAs to form InGaAs.