Your cart is currently empty!
Atomfair 2-inch GaN Single Crystal Wafer (N-type) GaN-FS 2 inch≤2cm-2 400±50 μm C-axis(0001)±0.5° TTV ≤15μm BOW≤20μm
Gallium Nitride (GaN), a binary III/V direct-bandgap semiconductor widely used in LEDs since the 1990s, boasts a wurtzite crystal structure and exceptional hardness. Its 3.4eV wide bandgap enables superior performance in optoelectronic, high-power, and high-frequency devices—for instance, it serves as the substrate for 405nm violet laser diodes without nonlinear optical frequency doubling. With low sensitivity to ionizing radiation, it suits satellite solar arrays and benefits military/space apps. GaN transistors operate at higher temps and voltages than GaAs ones, ideal for microwave power amplifiers, and show promise for THz devices. Xiamen Zhongxin Jingyan offers 2″, 3″, 4″ GaN single crystal wafers…
Description
| Specifications | |
|---|---|
| Product Model | GaN-FS |
| Dimensions | 2 inch |
| Macro Defect Density | ≤2cm-2 |
| Thickness | 400±50 μm |
| Orientation | C-axis(0001)±0.5° |
| TTV | ≤15 μm |
| BOW | ≤20 μm |
| Conduction Type | N-type |
| Resistivity (300K) | <0.5Ωcm |
| Dislocation Density | <5×106 cm-2 |
| Useable Surface Area | >90% |
| Front Surface | Ra <0.2nm, Epi-ready polished |
| Back Surface | Fine ground |
Related products
-
Atomfair 10*10mm Silicon Carbide (SiC) Substrate
-
Atomfair 2 inch diameter Silicon Carbide (SiC) Substrate
-
Atomfair 2-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 2 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low
-
Atomfair 2-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 2 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low
-
Atomfair 2-inch GaN-on-Si HEMT Epitaxial Wafer Silicon (Si) 2 inch Lattice Mismatch 16.90% Thermal Expansion Difference 56% 1×10 9/cm2