Silicon has long been a key semiconductor for most electronic applications, yet it is less efficient than silicon carbide (SiC) wafers. Now adopted in diverse uses-especially electric vehicles-SiC wafers address energy and cost challenges in developing high-efficiency, high-power devices. Composed of pure silicon and carbon, they outperform silicon in three key aspects: higher critical avalanche breakdown field, greater thermal conductivity, and wider bandgap (3eV). They withstand 8x higher voltage gradients than silicon, have lower high-temperature leakage current, higher current density, thinner structures (1/10 the thickness of silicon epitaxial layers), and lower conduction loss (2x higher doping concentration than silicon).
| Specifications | |
|---|---|
| Substrate Material | Silicon Carbide (SiC) |
| Diameter | 2 inch |
| Lattice Mismatch | 3.50% |
| Thermal Expansion Difference | 25% |
| Defect Density | 5×108/cm2 |
| Leakage Current | High |
| Integration Potential | Medium |
Combines SiC’s excellent thermal conductivity with GaN’s high-frequency and low-loss characteristics. Ideal for RF applications including 5G base stations and defense sector power amplifiers.
