Silicon has long been a key semiconductor for most electronic applications, yet it is less efficient than silicon carbide (SiC) wafers. Now adopted in diverse uses-especially electric vehicles-SiC wafers address energy and cost challenges in developing high-efficiency, high-power devices. Composed of pure silicon and carbon, they outperform silicon in three key aspects: higher critical avalanche breakdown field, greater thermal conductivity, and wider bandgap (3eV). They withstand 8x higher voltage gradients than silicon, have lower high-temperature leakage current, higher current density, thinner structures (1/10 the thickness of silicon epitaxial layers), and lower conduction loss (8x higher doping concentration than silicon).
| Characteristics | |
|---|---|
| Substrate Material | Sapphire |
| Diameter | 2 inch |
| Uniformity | Excellent |
| Breakdown Voltage | High |
| Buffer Leakage | Very Low |
| Electron Concentration | High |
| Electron Mobility | High |
| Sheet Resistance | Low |
Thermal management achieved through flip-chip bonding to thermally conductive substrates like AlN ceramics.
