Your cart is currently empty!

Atomfair 10*10mm Silicon Carbide (SiC) Substrate
A square 10*10mm SiC substrate available in industrial, research, and dummy grades. Suitable for high-performance optoelectronic and power device applications. Offers excellent thermal and electrical properties.
Description
A square 10*10mm SiC substrate available in industrial, research, and dummy grades. Suitable for high-performance optoelectronic and power device applications. Offers excellent thermal and electrical properties.
| Parameter | Industrial Grade (P Grade) | Research Grade (R Grade) | Dummy Grade (D Grade) |
|---|---|---|---|
| Dimensions | 10*10mmยฑ0.2mm | 10*10mmยฑ0.2mm | 10*10mmยฑ0.2mm |
| Thickness | 350umยฑ25 um | 350umยฑ25 um | 350umยฑ25 um |
| Wafer Orientation | Off axis: 2.0ยฐ-4.0ยฐ toward [1120] ยฑ0.5ยฐ (4H/6H-P), On axis:(111)ยฑ0.5ยฐ (3C-N) | Off axis: 2.0ยฐ-4.0ยฐ toward [1120] ยฑ0.5ยฐ (4H/6H-P), On axis:(111)ยฑ0.5ยฐ (3C-N) | Off axis: 2.0ยฐ-4.0ยฐ toward [1120] ยฑ0.5ยฐ (4H/6H-P), On axis:(111)ยฑ0.5ยฐ (3C-N) |
| Micropipe Density | 0cmยฒ | 0cmยฒ | 0cmยฒ |
| Resistivity (4H/6H-P) | โค0.10ฮฉยทcm | โค0.10ฮฉยทcm | โค0.10ฮฉยทcm |
| Resistivity (3C-N) | โค0.8mฮฉยทcm | โค0.8mฮฉยทcm | โค0.8mฮฉยทcm |
| Primary Flat Orientation (4H/6H-P) | {10-10}ยฑ5.0ยฐ | {10-10}ยฑ5.0ยฐ | {10-10}ยฑ5.0ยฐ |
| Primary Flat Orientation (3C-N) | {1-10}ยฑ5.0ยฐ | {1-10}ยฑ5.0ยฐ | {1-10}ยฑ5.0ยฐ |
| Primary Flat Length | 15.9mmยฑ1.7mm | 15.9mmยฑ1.7mm | 15.9mmยฑ1.7mm |
| Secondary Flat Length | 8.0mmยฑ1.7mm | 8.0mmยฑ1.7mm | 8.0mmยฑ1.7mm |
| Secondary Flat Orientation | 90ยฐ CW from Prime flat ยฑ5.0ยฐ | 90ยฐ CW from Prime flat ยฑ5.0ยฐ | 90ยฐ CW from Prime flat ยฑ5.0ยฐ |
| Edge Exclusion | 3mm | 3mm | 3mm |
| TTV/Bow/Warp | โค2.5ฮผm/โค5ฮผm/โค15ฮผm/โค30ฮผm | โค2.5ฮผm/โค5ฮผm/โค15ฮผm/โค30ฮผm | โค2.5ฮผm/โค5ฮผm/โค15ฮผm/โค30ฮผm |
| Surface Roughness (Polish) | Raโค1 nm | Raโค1 nm | Raโค1 nm |
| Surface Roughness (CMP) | Raโค0.2 nm | Raโค0.2 nm | Raโค0.2 nm |
| Edge Cracks | None | 1 allowed, โค1 mm | None |
| Hex Plates | โค1% cumulative area | โค3% cumulative area | โค3% cumulative area |
| Polytype Areas | None | โค2% cumulative area | โค5% cumulative area |
| Si Surface Scratches | โค3 scratches, โค1รwafer diameter cumulative length | โค5 scratches, โค1รwafer diameter cumulative length | โค8 scratches, โค1รwafer diameter cumulative length |
| Edge Chips | None | โค3 allowed, โค0.5 mm each | โค5 allowed, โค1 mm each |
| Si Surface Contamination | None | None | None |
| Packaging | Multi-wafer Cassette or Single Wafer Container | Multi-wafer Cassette or Single Wafer Container | Multi-wafer Cassette or Single Wafer Container |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
Related products
-
Atomfair 2 inch diameter Silicon Carbide (SiC) Substrate
-
Atomfair 2-inch GaN Single Crystal Wafer (N-type) GaN-FS 2 inchโค2cm-2 400ยฑ50 ฮผm C-axis(0001)ยฑ0.5ยฐ TTV โค15ฮผm BOWโค20ฮผm
-
Atomfair 2-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 2 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low
-
Atomfair 2-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 2 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low
-
Atomfair 2-inch GaN-on-Si HEMT Epitaxial Wafer Silicon (Si) 2 inch Lattice Mismatch 16.90% Thermal Expansion Difference 56% 1ร10 9/cm2
