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Atmofair Indium Phosphide (InP) Semiconductor Substrate
High-quality InP substrates with various doping options (none, Sn, S, Fe, Zn). Ideal for high-speed electronics and photonic applications. Features low dislocation density and excellent electrical properties.
Description
High-quality InP substrates with various doping options (none, Sn, S, Fe, Zn). Ideal for high-speed electronics and photonic applications. Features low dislocation density and excellent electrical properties.
| Property | Value |
|---|---|
| Doping | none, Sn, S, Fe, Zn |
| Conduction Types | N, N, N, SI, P |
| Carrier Concentration | 1-2??10?? cm??, 1-3??10?? cm??, 1-4??10?? cm??, 6-4??10?? cm?? |
| Dislocation Density | <5??10? cm?? |
| Growth Method | LEC |
| Standard Substrate Size | ??2″??0.35mm |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
