Description
SiC epitaxial wafers use SiC single crystal wafers as substrates. A single crystal layer is typically deposited on the wafer via the Chemical Vapor Deposition (CVD) method to form the epitaxial wafer-specifically, SiC epitaxy is prepared by growing a SiC epitaxial layer on a conductive SiC substrate, which further enables the manufacturing of power devices.
Our company offers 4-inch and 6-inch N-type 4H-SiC epitaxial wafers. These wafers feature large bandgap, high saturated electron drift velocity, high-speed two-dimensional electron gas, and high breakdown field strength. Such properties allow devices to achieve high-temperature resistance, high-voltage resistance, fast switching speed, low on-resistance, small size, and light weight.
SiC epitaxial wafers are mainly used for Schottky Barrier Diodes (SBD), Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET), Junction Field-Effect Transistors (JFET), Bipolar Junction Transistors (BJT), Silicon Controlled Rectifiers (SCR), and Insulated Gate Bipolar Transistors (IGBT), covering low-voltage, medium-voltage, and high-voltage fields. Currently, SiC epitaxial wafers for high-voltage applications are in the R&D stage worldwide.
