Silicon has long been a key semiconductor for most electronic applications, yet it is less efficient than silicon carbide (SiC) wafers. Now adopted in diverse uses—especially electric vehicles—SiC wafers address energy and cost challenges in developing high-efficiency, high-power devices. Composed of pure silicon and carbon, they outperform silicon in three key aspects: higher critical avalanche breakdown field, greater thermal conductivity, and wider bandgap (3eV). They withstand 8x higher voltage gradients than silicon, have lower high-temperature leakage current, higher current density, thinner structures (1/10 the thickness of silicon epitaxial layers), and lower conduction loss (2x higher doping concentration than silicon).