Atomfair 635nm~2004nm GaAs Laser Epitaxial Wafers – AlGaAs/GaAs Epitaxial Materials

We offer 635nm~2004nm laser GaAs epitaxial wafers grown via MOCVD (Metal-Organic Chemical Vapor Deposition) technology, covering material systems like InGaAs/GaAs, GaAlAs/GaAs and InGaAlP/GaAs. With international-level quality, our wafers are widely used in optical fiber communication, industrial applications, VCSELs (Vertical-Cavity Surface-Emitting Lasers), infrared and photodetectors, meeting diverse laser wavelength needs across different scenarios.

Description

1. Core Advantages
High Technical Maturity: As one of the most mature III-V compound systems, it serves as a fundamental material in modern optoelectronic technology, featuring stable and reliable performance along with rich experience in industrial application.
Flexible Lattice Matching and Structure: AlGaAs achieves lattice matching with GaAs across the entire composition range and has a large band gap difference (△Eg). It can be used to fabricate various structures such as heterojunctions, quantum wells, and superlattices, adapting to the design requirements of different devices.
Wavelength Tunability: The laser wavelength can be precisely adjusted by modifying the aluminum (Al) composition, meeting the specific wavelength requirements of different application scenarios.
Device Performance Optimization: There is a significant refractive index difference between AlGaAs and GaAs materials, enabling the fabrication of DBRs (Distributed Bragg Reflectors) to effectively enhance the performance of laser diodes.
2. Precautions
Due to the aluminum (Al) component in the material, Al is prone to oxidation, which leads to the formation of COD (Catastrophic Optical Damage). This will limit the high-power output of the device, so comprehensive consideration of the power requirements of the application scenario is necessary during material selection.
3. Application Fields
It is applicable to scenarios with high requirements for material stability and wavelength tunability, such as optical fiber communication, industrial laser equipment, VCSELs (Vertical-Cavity Surface-Emitting Lasers), and medium-short wavelength photodetectors.