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Atomfair InP/InGaAs HBT Epitaxial Wafer

Our company supplies gallium arsenide epitaxial materials, including AlGaAs/GaAs, InGaP/GaAs and InP/InGaAs, for manufacturing heterojunction bipolar transistors (HBTs). HBTs feature emitters, bases and collectors made of materials with different band gaps. Their emitter efficiency mainly depends on band gap differences, barely limited by doping concentration, enabling flexible transistor design.

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Description

Epitaxial Structure Characteristics
The InP/InGaAs HBT epitaxial wafer employs optimized material combinations with:

Emitter: Wide-bandgap InP
Base: Narrow-bandgap InGaAs (fully leveraging its superior electronic properties)
Collector: Matched InP/InGaAs structure
Precise lattice matching and thermal expansion coefficient alignment are maintained throughout the epitaxial stack through advanced growth techniques.

Key Performance Advantages
Ultra-High Frequency Capability:

Electron mobility: 1.6ร— GaAs, 9ร— Si
Significant velocity overshoot effect
Typical fT > 300 GHz (structure dependent)
Low-Power Operation:

Reduced turn-on voltage (VBE โ‰ˆ 0.7V)
30% lower power dissipation vs. GaAs HBTs
Enhanced Reliability:

High breakdown field (>300 kV/cm)
Low surface recombination velocity (<103 cm/s)
Superior thermal conductivity (0.68 W/cmยทK vs. GaAs’s 0.46)
OEIC Integration:

Native compatibility with 1.3ฮผm photodetectors
Enables monolithic optoelectronic ICs
Matches minimum dispersion wavelength in fiber optics
Noise Performance:

1/f noise corner frequency < 1 kHz NFmin < 2 dB @ 10 GHz Target Applications These epitaxial wafers enable next-generation devices for: Millimeter-wave communication systems (E-band/W-band) Low-noise receivers for 5G/6G infrastructure Optical transceivers (100G/400G/800G) High-precision test & measurement equipment Space-grade electronics (radiation-hard)

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