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Atomfair InGaP/GaAs HBT Epitaxial Wafer

Our company supplies gallium arsenide epitaxial materials, including AlGaAs/GaAs, InGaP/GaAs and InP/InGaAs, for manufacturing heterojunction bipolar transistors (HBTs). HBTs feature emitters, bases and collectors made of materials with different band gaps. Their emitter efficiency mainly depends on band gap differences, barely limited by doping concentration, enabling flexible transistor design.

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Description

Epitaxial Structure
The InGaP/GaAs HBT epitaxial wafer features a precisely engineered multilayer architecture consisting of (from bottom to top):

(100) GaAs substrate
n-type GaAs subcollector
n-type GaAs collector
p-type GaAs base
n-type InGaP emitter
n-type InGaAs contact layer
This optimized layer stack ensures functional requirements are met for each device region while maintaining excellent lattice matching throughout the structure.

Performance Advantages
Bandgap Engineering: The strategic material selection leverages bandgap differences and doping characteristics to maximize emitter efficiency – a fundamental HBT characteristic governed by ΔEg. This enables flexible device design with superior performance.

GaAs-Based Benefits: As with other GaAs-based HBTs, devices fabricated from this wafer exhibit:

High power density
Low phase noise
Excellent linearity
Single-supply operation capability
Target Applications
While demonstrating slightly lower high-frequency performance compared to pHEMTs, InGaP/GaAs HBTs remain widely deployed in:

Low-frequency wireless systems
Wireless regional area networks (WRAN)
High-efficiency power amplifiers
3G/4G/5G/Wi-Fi/GSM/HPUE mobile devices

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