Description

Bis(4-tert-butylphenyl)iodonium hexafluorophosphate (CAS No. 61358-25-6) is a high-purity iodonium salt with the molecular formula C₂₀H₂₆F₆IP. This compound is widely recognized for its role as a photoacid generator (PAG) in advanced photoresist formulations, particularly in semiconductor lithography and UV-curable coatings. Its robust thermal stability and efficient photodecomposition under UV irradiation make it ideal for high-resolution patterning in microelectronics and printed circuit board (PCB) manufacturing. The hexafluorophosphate counterion enhances solubility in organic solvents, ensuring uniform dispersion in resist formulations. Packaged under inert conditions to maintain stability, this reagent is rigorously tested for consistency, ensuring optimal performance in sensitive applications.

Properties

• CAS Number: 61358-25-6
• Complexity: 334
• IUPAC Name: bis(4-tert-butylphenyl)iodonium;hexafluorophosphate
• InChI: InChI=1S/C20H26I.F6P/c1-19(2,3)15-7-11-17(12-8-15)21-18-13-9-16(10-14-18)20(4,5)6;1-7(2,3,4,5)6/h7-14H,1-6H3;/q+1;-1
• InChI Key: CJLLNCQWBHTSCB-UHFFFAOYSA-N
• Exact Mass: 538.07210
• Molecular Formula: C20H26F6IP
• Molecular Weight: 538.3
• SMILES: CC(C)(C)C1=CC=C(C=C1)[I+]C2=CC=C(C=C2)C(C)(C)C.F[P-](F)(F)(F)(F)F
• Monoisotopic Mass: 538.07210
• Synonyms: Bis(4-tert-butylphenyl)iodonium Hexafluorophosphate, 620-341-4, 61358-25-6, Bis(4-(tert-butyl)phenyl)iodonium hexafluorophosphate(V), BIS(4-T-BUTYL PHENYL)IODONIUM HEXAFLUOROPHOSPHATE, bis(4-tert-butylphenyl)iodanium;hexafluorophosphate, MFCD06797070, EC 620-341-4, Bis(4-tert-Butylphenyl) iodonium hexafluorophosphate, BIS(4-TERT-BUTYLPHENYL)IODANIUM HEXAFLUOROPHOSPHATE, DTXSID20552278, CJLLNCQWBHTSCB-UHFFFAOYSA-N, AKOS015833789, FB60674, DB-400731, B2380, NS00078379, T71123, bis-(4-t-butylphenyl) iodonium hexafluorophosphate, Bis(4-tert-butylphenyl)iodonium hexafluorophosphate, 98%, Iodonium, bis(4-(1,1-dimethylethyl)phenyl)-, hexafluorophosphate(1-)

Application

Bis(4-tert-butylphenyl)iodonium hexafluorophosphate is primarily used as a photoacid generator (PAG) in chemically amplified photoresists for deep UV (DUV) and extreme UV (EUV) lithography processes. It enables high-resolution patterning in semiconductor fabrication by releasing acid upon UV exposure, catalyzing polymer crosslinking or deprotection reactions. This compound is also employed in UV-curable inks and coatings, where it initiates cationic polymerization. Its compatibility with organic matrices makes it suitable for advanced optoelectronic materials.

Safety and Hazards

GHS Hazard Statements

• H314 (69.5%): Causes severe skin burns and eye damage [Danger Skin corrosion/irritation]
• H317 (20.3%): May cause an allergic skin reaction [Warning Sensitization, Skin]
• H318 (20.3%): Causes serious eye damage [Danger Serious eye damage/eye irritation]
• H400 (20.3%): Very toxic to aquatic life [Warning Hazardous to the aquatic environment, acute hazard]
• H410 (20.3%): Very toxic to aquatic life with long lasting effects [Warning Hazardous to the aquatic environment, long-term hazard]

Precautionary Statements

• P260, P261, P264, P264+P265, P272, P273, P280, P301+P330+P331, P302+P352, P302+P361+P354, P304+P340, P305+P354+P338, P316, P317, P321, P333+P317, P362+P364, P363, P391, P405, and P501

Hazard Classes and Categories

• Skin Corr. 1B (69.5%)
• Skin Sens. 1 (20.3%)
• Eye Dam. 1 (20.3%)
• Aquatic Acute 1 (20.3%)
• Aquatic Chronic 1 (20.3%)

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