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Via Plasma-Enhanced Atomic Layer Deposition to Create Ultra-Thin Radiation-Hardened Coatings for Space Electronics

Via Plasma-Enhanced Atomic Layer Deposition to Create Ultra-Thin Radiation-Hardened Coatings for Space Electronics

Introduction

Space electronics face relentless bombardment from cosmic radiation, a silent and invisible adversary that can degrade performance, induce soft errors, and ultimately lead to catastrophic failure. Traditional shielding methods, often bulky and impractical for modern miniaturized satellites, are being supplanted by advanced nanoscale solutions. Among these, plasma-enhanced atomic layer deposition (PE-ALD) emerges as a revolutionary technique to create ultra-thin, radiation-hardened coatings capable of withstanding the harsh environment of space.

The Challenge of Cosmic Radiation in Space Electronics

Cosmic radiation consists of high-energy particles—protons, electrons, and heavy ions—emanating from the sun and deep space. These particles can:

Conventional shielding, such as aluminum or tantalum enclosures, adds significant mass—an untenable trade-off for modern CubeSats and microsatellites. Thus, the quest for nanometer-scale protective coatings has intensified.

Plasma-Enhanced Atomic Layer Deposition (PE-ALD)

PE-ALD is a variant of atomic layer deposition (ALD) that leverages plasma to enhance chemical reactivity, enabling precise deposition of ultra-thin films at the atomic level. Key advantages include:

Mechanism of PE-ALD

The PE-ALD process follows a cyclical sequence:

  1. Precursor exposure: A gaseous precursor chemisorbs onto the substrate surface.
  2. Purge: Excess precursor is removed by inert gas flow.
  3. Plasma activation: A reactive plasma species (e.g., O2, N2, H2) is introduced to drive the reaction.
  4. Final purge: Byproducts are evacuated, completing the cycle.

Radiation-Hardened Coatings via PE-ALD

To mitigate cosmic radiation effects, PE-ALD is employed to deposit ultra-thin protective layers with tailored properties:

1. High-Z Materials for Particle Stopping Power

Materials with high atomic numbers (Z), such as hafnium oxide (HfO2) or tantalum nitride (TaN), are effective at attenuating high-energy particles. PE-ALD enables their deposition with:

2. Dielectric Layers for Charge Mitigation

Radiation-induced charge buildup in oxides can lead to threshold voltage shifts. PE-ALD-deposited films like Al2O3 or SiO2 offer:

3. Conductive Shielding for EMI Protection

Metallic coatings such as TiN or W, deposited via PE-ALD, provide electromagnetic interference (EMI) shielding while remaining ultra-thin (<20 nm).

Case Study: PE-ALD HfO2 for Satellite Electronics

A recent study demonstrated the efficacy of a 15 nm HfO2 coating deposited via PE-ALD on Si-based transistors:

Challenges and Future Directions

Despite its promise, PE-ALD faces hurdles:

The Future of Radiation-Hardened Space Electronics

The relentless march toward smaller, faster, and more resilient space electronics demands innovations like PE-ALD. As missions venture deeper into space—toward Jupiter’s punishing radiation belts or beyond—ultra-thin coatings will be the silent guardians of humanity’s electronic emissaries.

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