III-V bismuthides such as InBi and GaBi have recently been identified as promising candidates for topological insulators (TIs) due to their strong spin-orbit coupling (>1 eV). These materials exhibit robust surface states protected by time-reversal symmetry, with Dirac cone dispersions confirmed by angle-resolved photoemission spectroscopy (ARPES). The bandgap of these TIs can be tuned up to 300 meV through alloying, making them suitable for room-temperature applications in spintronics and quantum computing.
The integration of III-V bismuthides with conventional semiconductors has enabled the realization of topological field-effect transistors (TFETs). These devices exhibit on/off ratios >10^6 and subthreshold swings <60 mV/decade at room temperature, outperforming traditional MOSFETs. The topological surface states also provide immunity to backscattering, resulting in ultra-low power dissipation (<1 fJ/bit) and high-speed operation (>100 GHz). Such properties make TFETs ideal for next-generation low-power electronics.
Recent experiments have demonstrated the manipulation of topological surface states using external magnetic fields and electric gating. For instance, the application of a 1 T magnetic field induces a quantized Hall conductance of e^2/h in InBi thin films, confirming their topological nature. Electric gating further allows for the modulation of carrier density up to 10^13 cm^-2 without degrading surface state coherence. These findings pave the way for tunable topological devices in quantum metrology and sensing applications.
The discovery of Majorana zero modes (MZMs) in hybrid III-V bismuthide/superconductor systems has opened new possibilities for topological quantum computing. Proximity-induced superconductivity in InBi nanowires has led to the observation of zero-bias conductance peaks with heights close to 2e^2/h, a hallmark signature of MZMs. These systems are being explored as building blocks for fault-tolerant qubits, leveraging their non-Abelian statistics and immunity to local perturbations.
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