Quantum dot (QD) lasers based on III-V materials have emerged as a transformative technology for next-generation photonics, offering ultra-low threshold currents below 10 A/cm² and temperature insensitivity up to 85°C. Recent advancements in InAs/GaAs QD lasers have demonstrated wall-plug efficiencies exceeding 70%, surpassing traditional quantum well lasers. These devices operate at wavelengths ranging from 1.3 to 1.55 µm, making them ideal for telecommunications and data center applications. The incorporation of strain-compensated barriers has further reduced defect densities to below 10⁶ cm⁻², enhancing device reliability.
The integration of QD lasers with silicon photonics has enabled on-chip light sources with coupling efficiencies over 90%, addressing the critical challenge of III-V/Si compatibility. By leveraging selective area epitaxy, researchers have achieved precise control over QD positioning with sub-10 nm accuracy. This has led to single-mode operation with side-mode suppression ratios exceeding 50 dB, crucial for high-speed optical communication. Additionally, the use of p-doped QDs has extended the modulation bandwidth to over 25 GHz, enabling terabit-scale data transmission.
Recent breakthroughs in QD laser fabrication include the development of multi-stack active regions with up to 15 QD layers, increasing optical gain by a factor of three compared to single-layer designs. This innovation has resulted in output powers exceeding 500 mW under continuous wave operation at room temperature. Furthermore, the introduction of tunnel injection schemes has reduced carrier leakage by over 80%, significantly improving device efficiency. These advancements are paving the way for scalable and cost-effective photonic integrated circuits (PICs).
The application of QD lasers in quantum technologies is also gaining traction, with demonstrations of entangled photon pair generation at rates exceeding 10⁹ pairs/s. This is achieved through biexciton-exciton cascades in highly symmetric QDs grown on GaAs substrates. The integration of these sources with superconducting nanowire single-photon detectors (SNSPDs) has enabled quantum key distribution (QKD) systems with secure key rates over 1 Mbps over distances of up to 100 km. Such developments highlight the potential of III-V QD lasers in revolutionizing both classical and quantum photonics.
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