II-VI Materials for High-Efficiency Tandem Solar Cells

II-VI materials like CdTe and ZnSe have emerged as promising candidates for tandem solar cells due to their wide bandgaps (1.5–2.4 eV) and high absorption coefficients (>10^5 cm^-1). Recent devices combining CdTe with perovskite layers have achieved power conversion efficiencies (PCEs) exceeding 30%, surpassing the Shockley-Queisser limit for single-junction cells. The use of graded interfaces has reduced recombination losses to <10^12 cm^-3 s^-1.

Advanced doping techniques using group V elements (e.g., As) in CdTe have improved carrier concentrations to >10^16 cm^-3 while maintaining minority carrier lifetimes >100 ns. This has enabled open-circuit voltages (Voc) approaching 1 V in subcells, a critical factor for tandem efficiency optimization. Additionally, the integration of ZnSe buffer layers has reduced lattice mismatch-induced defects by >50%.

Scalability is being addressed through vapor transport deposition (VTD), which allows for deposition rates of up to 10 µm/min over areas exceeding 1 m^2. This method has demonstrated uniformity within ±5% across large substrates, making it suitable for industrial-scale production. Recent cost analyses suggest that tandem cells using II-VI materials could achieve levelized costs of energy (LCOE) below $0.03/kWh by 2030.

Emerging research focuses on bifacial tandem cells leveraging II-VI materials' transparency in the near-infrared region (>800 nm). Prototypes have shown bifacial gains of up to 20% under albedo conditions, further enhancing energy yield per unit area.

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