Bismuth selenide (Bi2Se3) has emerged as a quintessential material for studying topological insulators (TIs), owing to its robust surface states and large bulk bandgap (~0.3 eV). Recent breakthroughs in epitaxial growth techniques have enabled the synthesis of ultra-thin Bi2Se3 films with atomic precision, achieving thicknesses as low as 1 quintuple layer (QL). These advancements have revealed quantized topological surface states with a Dirac cone dispersion, confirmed by angle-resolved photoemission spectroscopy (ARPES) measurements. Notably, a 2023 study demonstrated that Bi2Se3 films grown on SrTiO3 substrates exhibit enhanced electron mobility (>10,000 cm²/Vs) and reduced bulk conductivity, making them ideal for spintronic applications. Key metrics: 'Bi2Se3', '1 QL thickness', '0.3 eV bandgap', '>10,000 cm²/Vs mobility'.
The integration of Bi2Se3 into quantum devices has seen remarkable progress, particularly in the realization of Majorana zero modes (MZMs) for fault-tolerant quantum computing. A 2022 experiment reported the observation of MZMs at the edges of superconducting Bi2Se3 nanowires coupled to NbTiN superconductors, with a topological gap of ~50 µeV. This breakthrough was achieved by fine-tuning the proximity effect and optimizing the nanowire geometry to suppress trivial Andreev bound states. Furthermore, recent theoretical models predict that hybrid structures of Bi2Se3 with ferromagnetic insulators could enable chiral Majorana edge modes, opening new avenues for topological quantum computation. Key metrics: 'Bi2Se3 nanowires', '50 µeV topological gap', 'chiral Majorana edge modes'.
Advancements in strain engineering have unlocked unprecedented control over the electronic properties of Bi2Se3. A 2023 study demonstrated that uniaxial strain can modulate the Dirac point energy by up to 100 meV, enabling tunable surface state conductivity. This was achieved using flexible substrates like polyimide, which allow for reversible strain application without degrading material quality. Additionally, strain-induced band inversion has been observed in bilayer Bi2Se3 under ~5% tensile strain, leading to a transition from a trivial to a topological phase. These findings highlight the potential of strain engineering for designing adaptive TI-based devices. Key metrics: 'Bi2Se3', '100 meV Dirac point shift', '5% tensile strain'.
The application of Bi2Se3 in thermoelectric devices has gained significant traction due to its high thermoelectric figure of merit (ZT). Recent research has shown that nanostructuring Bi2Se3 into superlattices can enhance ZT values up to 1.5 at room temperature, primarily by reducing lattice thermal conductivity while maintaining high electrical conductivity. A 2023 breakthrough involved doping Bi2Se3 with Sn to optimize carrier concentration, achieving a ZT of 1.8 at 500 K. These developments position Bi2Se3 as a leading candidate for next-generation thermoelectric materials in energy harvesting applications. Key metrics: 'Bi2Se3 superlattices', 'ZT = 1.5 at 300 K', 'ZT = 1.8 at 500 K'.
Finally, the exploration of heterostructures combining Bi2Se3 with other two-dimensional materials has opened new frontiers in device physics and engineering. A recent study demonstrated that stacking Bi2Se3 with graphene creates a hybrid system with enhanced spin-orbit coupling and tunable band alignment via gate voltage control. This heterostructure exhibited an anomalous Hall effect with a Hall angle exceeding 10°, paving the way for spin-Hall effect-based memory devices. Additionally, integrating Bi2Se3 with transition metal dichalcogenides like MoS₂ has shown promise for valleytronics applications, leveraging the interplay between topology and valley degrees of freedom. Key metrics: 'Bi2Se3-graphene heterostructure', 'Hall angle >10°', 'valleytronics applications'.
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