In-situ transmission electron microscopy (TEM) has achieved real-time imaging of silicon nanostructures at atomic resolution (<0.05 nm). Recent studies have captured the formation of silicon nanowires with diameters as small as 2 nm, revealing growth rates of up to 10 nm/s under specific conditions. This technique is indispensable for understanding nanoscale phenomena like surface diffusion and phase transitions.
The use of environmental TEM (ETEM) has enabled observations of silicon oxidation dynamics under controlled gas environments (e.g., O2 partial pressures from 10^-5 to 1 atm). Experiments show that oxide layer growth follows a logarithmic rate law, with thicknesses increasing from 1 nm to 5 nm within minutes at 500°C. These findings are critical for optimizing silicon passivation processes in microelectronics.
In-situ TEM combined with electrical biasing has revealed the mechanical failure mechanisms of silicon nanostructures under stress. For example, silicon nanowires exhibit fracture strains of up to 12% before breaking, compared to bulk silicon’s typical strain limit of ~2%. Such data inform the design of robust nanoelectronic devices.
Advanced TEM techniques like electron energy loss spectroscopy (EELS) provide chemical composition mapping with sub-nm resolution. Recent studies have detected trace impurities like boron and phosphorus at concentrations as low as 0.01 at.% in silicon nanostructures, enabling precise doping analysis.
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