Two-dimensional (2D) silicon allotropes, such as silicene and germanene, have garnered attention for their exceptional electronic properties and mechanical flexibility. Silicene exhibits a Dirac cone structure similar to graphene but with a higher spin-orbit coupling strength of ~1.55 meV, enabling potential applications in spintronics. Recent experiments have demonstrated field-effect transistors (FETs) based on silicene with mobilities exceeding 10^4 cm^2/Vs at room temperature.
The synthesis of silicene on Ag(111) substrates has achieved atomic precision, with layer thicknesses controlled down to a single atomic layer (~0.3 nm). This precision enables the fabrication of ultra-thin devices with sub-1 nm gate dielectrics, reducing power consumption by up to 70%. Furthermore, silicene's buckling structure provides tunable bandgaps ranging from 0 to ~1 eV under strain engineering techniques.
Flexible electronics based on silicene have shown remarkable mechanical resilience, maintaining electrical performance after bending radii as small as 1 mm over 10^4 cycles. This makes silicene ideal for wearable devices and foldable displays. Recent prototypes have demonstrated transparent conductive films with sheet resistances below 100 Ω/sq and transmittances exceeding 90% in the visible spectrum.
Despite these advances, challenges remain in stabilizing silicene under ambient conditions due to its rapid oxidation within minutes of exposure to air. Encapsulation strategies using hexagonal boron nitride (hBN) layers have extended stability to over 100 hours without degradation.
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