MXenes, a class of two-dimensional transition metal carbides and nitrides, have emerged as a revolutionary material for photodetection due to their exceptional optoelectronic properties. Recent studies have demonstrated that Ti3C2Tx MXene-based photodetectors achieve a responsivity of up to 1.2 A/W at 450 nm wavelength, surpassing traditional materials like graphene (0.1 A/W) and MoS2 (0.5 A/W). This is attributed to MXenes' tunable bandgap (0.2–1.8 eV), high carrier mobility (~10,000 cm²/V·s), and superior light absorption efficiency (>95% across visible to near-infrared spectra). Additionally, their solution-processability enables scalable fabrication of flexible and transparent devices, with transmittance exceeding 90% in the visible range.
The integration of MXenes with other nanomaterials has further enhanced photodetector performance. For instance, hybrid MXene/MoS2 heterostructures exhibit a record-breaking photoresponsivity of 10^4 A/W and a detectivity of 10^13 Jones at 532 nm, owing to efficient charge transfer and reduced recombination rates. Similarly, MXene/quantum dot composites have achieved ultrafast response times (<10 μs) and broadband detection (300–2500 nm), making them ideal for high-speed imaging and sensing applications. These hybrid systems leverage MXenes' metallic conductivity (~6,000 S/cm) and the quantum confinement effects of the coupled materials.
MXene-based photodetectors also excel in environmental stability and durability. Unlike conventional materials such as perovskites, which degrade under ambient conditions, MXenes retain their performance even after prolonged exposure to humidity (>90% RH) and high temperatures (up to 200°C). This robustness is attributed to their inherent chemical stability and passivation layers formed during synthesis. Recent experiments show that MXene devices maintain >95% of their initial responsivity after 1,000 hours of operation under harsh conditions.
The scalability of MXene synthesis has been a critical factor in their adoption for optoelectronics. Advances in selective etching techniques have enabled the production of large-area MXene films with thicknesses as low as 1 nm and lateral dimensions exceeding 10 cm². These films exhibit uniform optoelectronic properties, with sheet resistances as low as 20 Ω/sq and optical transmittance >90%. Such scalability positions MXenes as a viable candidate for industrial-scale production of next-generation photodetectors.
Finally, MXenes' versatility extends to emerging applications such as wearable electronics and bio-integrated sensors. Flexible MXene-based photodetectors fabricated on polymer substrates demonstrate bending stability (>1,000 cycles) without performance degradation. Moreover, their biocompatibility enables integration with biological systems for real-time health monitoring. For example, MXene sensors have been used to detect UV exposure levels with a sensitivity of 0.1 nA/(mW/cm²), paving the way for personalized healthcare devices.
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