Quantum dot (QD) lasers based on III-V materials have achieved record-low threshold currents of 0.1 mA at room temperature, enabling ultra-efficient on-chip photonic integration. These devices leverage the atomic-like density of states in QDs, which reduces carrier leakage and enhances gain saturation. Recent advancements in InAs/GaAs QD lasers have demonstrated modulation bandwidths exceeding 25 GHz, making them ideal for high-speed optical interconnects.
The integration of QD lasers with silicon photonics has been a major breakthrough, with coupling efficiencies surpassing 90% using adiabatic tapering techniques. This compatibility is critical for next-generation data centers, where energy consumption must be reduced by at least 50% by 2030. Heterogeneous integration methods have also enabled the fabrication of QD lasers on Si substrates with lifetimes exceeding 100,000 hours at 85°C.
Novel growth techniques such as droplet epitaxy and selective area epitaxy have allowed precise control over QD size and density, achieving uniformities within ±2%. This precision is essential for wavelength division multiplexing (WDM) applications, where channel spacing as narrow as 0.4 nm is required. Recent studies have shown that QD lasers can operate across a broad spectral range from 1.2 to 1.6 µm, covering both O-band and C-band telecommunications windows.
The development of electrically pumped QD lasers emitting in the visible spectrum (e.g., red and green) has opened new avenues for micro-displays and augmented reality (AR) applications. These devices exhibit wall-plug efficiencies of over 30%, significantly higher than traditional LED-based systems. Additionally, their small footprint (<10 µm²) makes them ideal for high-density pixel arrays in AR glasses.
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