The synthesis of silicene, a 2D allotrope of silicon, has opened new avenues for ultra-thin electronics. Recent studies have demonstrated field-effect transistors (FETs) based on silicene with mobilities exceeding 10^4 cm^2/Vs at room temperature. This performance rivals that of graphene and transition metal dichalcogenides (TMDs), making silicene a promising candidate for next-generation flexible electronics.
The integration of silicene with other 2D materials, such as MoS2 and h-BN, has enabled the creation of van der Waals heterostructures with tailored electronic properties. For instance, silicene/MoS2 heterojunctions exhibit rectification ratios >10^6 and ON/OFF current ratios >10^8. These heterostructures are fabricated using transfer techniques that preserve the atomic integrity of the layers, ensuring minimal defects and high device performance.
The bandgap engineering of silicene through substrate interaction and external strain has been achieved experimentally. By depositing silicene on Ag(111) substrates and applying biaxial strain, researchers have tuned the bandgap from 0 to ~1 eV. This tunability is crucial for designing optoelectronic devices such as photodetectors and solar cells, which require specific bandgaps to optimize absorption and efficiency.
Recent advances in encapsulation techniques have improved the stability of silicene in ambient conditions. By sandwiching silicene between layers of h-BN or Al2O3, researchers have extended its lifetime from minutes to several months without degradation in electronic properties. This breakthrough paves the way for practical applications in wearable electronics and IoT devices.
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