Atomic precision doping using scanning tunneling microscopy (STM) has enabled the creation of single-atom transistors in silicon with sub-nanometer accuracy. These devices exhibit room-temperature operation with on/off ratios >10^6 and subthreshold swings <60 mV/decade, surpassing traditional MOSFETs. Phosphorus dopants placed within ±0.5 nm of target positions demonstrate exceptional control over electronic properties, critical for quantum dot arrays used in spin qubits.
Recent advances in STM lithography have achieved doping densities of up to 10^14 cm^-2 while maintaining atomic-level precision across wafer-scale areas (>300 mm diameter). This scalability is essential for manufacturing large-scale quantum processors with thousands of qubits operating at cryogenic temperatures (<100 mK). The ability to pattern dopants in three dimensions further enhances device functionality by enabling vertical integration of qubits.
Spin coherence times in STM-doped silicon qubits have reached >200 µs at temperatures below 1 K, rivaling those in III-V semiconductors like GaAs but without the need for isotopic purification or external magnetic fields exceeding ~100 mT which can complicate integration into existing CMOS architectures where stray fields could disrupt nearby circuitry or memory elements during operation cycles lasting hours before needing recalibration due drift effects caused thermal fluctuations over time scales ranging from microseconds milliseconds depending upon specific application requirements such as fault tolerance levels required within given system designs.
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