2D Silicon-Based Heterostructures

The synthesis of atomically thin silicene (2D silicon) has opened new avenues for ultra-thin electronics and optoelectronics. Recent studies have achieved carrier mobilities >10^4 cm^2/Vs in silicene-graphene heterostructures, surpassing traditional silicon MOSFETs. These structures exhibit bandgap tunability from 0 to 1 eV via external electric fields, enabling reconfigurable logic devices. The integration of silicene with transition metal dichalcogenides (TMDs) has demonstrated room-temperature excitonic luminescence with efficiencies >50%.

The epitaxial growth of silicene on Ag(111) substrates has achieved defect-free monolayers over areas >1 cm^2, a critical step toward scalable fabrication. Advanced characterization techniques like ARPES (Angle-Resolved Photoemission Spectroscopy) have revealed Dirac cone structures in silicene, confirming its graphene-like electronic properties. Recent work has demonstrated spin-orbit coupling strengths ~20 meV, making silicene a promising candidate for spintronics applications.

The development of van der Waals heterostructures combining silicene with hBN (hexagonal boron nitride) has enabled ultra-low leakage currents <10^-12 A/µm^2 at room temperature. These structures exhibit high thermal stability up to 600°C, making them suitable for harsh environments. Recent experiments have demonstrated tunneling transistors with subthreshold swings <60 mV/decade, approaching the theoretical limit for low-power electronics.

The integration of silicene into flexible electronics has achieved bending radii <1 mm without performance degradation, opening new possibilities for wearable devices. Recent advancements in transfer techniques have enabled the stacking of multiple silicene layers with precise control over interlayer spacing (<0.5 nm). This has led to the discovery of correlated insulating states and superconductivity at temperatures ~3 K.

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