Recent advancements in the synthesis and characterization of MoTe2 have revealed its exceptional potential as a quantum material. A breakthrough in chemical vapor deposition (CVD) techniques has enabled the growth of large-area, high-quality monolayer MoTe2 with a defect density as low as 0.01%. This ultra-low defect density has been instrumental in achieving room-temperature quantum coherence times exceeding 100 ps, a critical milestone for quantum computing applications. Furthermore, angle-resolved photoemission spectroscopy (ARPES) studies have demonstrated that monolayer MoTe2 exhibits a direct bandgap of 1.1 eV, making it an ideal candidate for optoelectronic devices operating in the near-infrared spectrum. These developments underscore MoTe2's role as a versatile platform for both quantum information science and next-generation photonics.
The discovery of topological phase transitions in MoTe2 has opened new avenues for exploring exotic quantum states. Under controlled strain engineering, monolayer MoTe2 transitions from a trivial insulator to a quantum spin Hall insulator, with a measured band inversion strength of 300 meV. This transition is accompanied by the emergence of helical edge states with a conductance quantization of e²/h, as confirmed by transport measurements at cryogenic temperatures (below 10 K). Additionally, recent experiments have demonstrated that applying an external electric field of 0.5 V/nm can induce a Weyl semimetal phase in bulk MoTe2, characterized by the presence of Weyl nodes separated by 0.3 Å⁻¹ in momentum space. These findings highlight MoTe2's potential for realizing robust topological quantum states and spintronic devices.
MoTe2 has emerged as a promising material for superconducting quantum circuits due to its tunable superconducting properties. Recent studies have shown that bilayer MoTe2 exhibits superconductivity with a critical temperature (Tc) of 8 K under hydrostatic pressure of 10 GPa. By doping with alkali metals such as potassium, Tc can be further enhanced to 12 K, with a superconducting gap (Δ) of 1.8 meV measured via scanning tunneling microscopy (STM). Moreover, Josephson junction devices fabricated from twisted bilayer MoTe2 have demonstrated coherent supercurrents with critical currents up to 10 μA at 4 K, paving the way for scalable superconducting qubits. These results position MoTe2 as a strong contender for high-performance quantum circuits operating at elevated temperatures.
The integration of MoTe2 into van der Waals heterostructures has unlocked unprecedented functionalities in quantum devices. For instance, stacking monolayer MoTe2 with hexagonal boron nitride (hBN) has resulted in enhanced carrier mobilities exceeding 10⁴ cm²/Vs at room temperature, as confirmed by Hall effect measurements. Additionally, heterostructures combining MoTe2 with graphene have exhibited valley-polarized photocurrents with polarization efficiencies over 90%, enabling novel valleytronic applications. Recent experiments have also demonstrated that embedding MoTe2 within transition metal dichalcogenide (TMDC) superlattices can induce moiré excitons with binding energies up to 300 meV, offering new opportunities for exciton-based quantum emitters and sensors.
Finally, advances in ultrafast spectroscopy have revealed the unique dynamics of excitons and phonons in MoTe2, shedding light on its potential for ultrafast quantum technologies. Time-resolved pump-probe measurements have uncovered exciton lifetimes of ~200 ps in monolayer MoTe2, coupled with coherent phonon oscillations at frequencies of ~3 THz. These phonon modes exhibit strong coupling to excitons, leading to the formation of exciton-polarons with binding energies of ~50 meV. Such interactions enable efficient energy transfer pathways and could be harnessed for ultrafast optical switches and modulators operating at terahertz frequencies.
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