Palladium diselenide (PdSe2) has emerged as a promising two-dimensional (2D) material for next-generation electronics due to its unique electronic properties and air stability. Recent breakthroughs in 2023 have demonstrated that PdSe2 exhibits a tunable bandgap ranging from 1.3 eV in monolayer form to 0 eV in bulk, making it versatile for both semiconductor and metallic applications. Advanced density functional theory (DFT) calculations have revealed that PdSe2 monolayers possess an exceptionally high carrier mobility of ~10,000 cm²/Vs at room temperature, surpassing that of graphene (~2,000 cm²/Vs) and MoS2 (~200 cm²/Vs). This property is attributed to its low effective mass of electrons (0.15 mₑ) and holes (0.20 mₑ), enabling ultrafast charge transport. Experimental validation using field-effect transistors (FETs) fabricated from exfoliated PdSe2 monolayers has shown on/off ratios exceeding 10⁷ and subthreshold swings as low as 60 mV/decade, rivaling state-of-the-art silicon-based devices.
The integration of PdSe2 into flexible electronics has been a recent focus, with significant progress in scalable synthesis techniques. Chemical vapor deposition (CVD) methods have achieved large-area growth of high-quality PdSe2 films with thickness control down to the monolayer level. A breakthrough in 2023 involved the development of a roll-to-roll CVD process capable of producing continuous PdSe2 films on flexible polyimide substrates at temperatures as low as 400°C. These films exhibited remarkable mechanical robustness, withstanding over 10,000 bending cycles at a radius of curvature <1 mm without degradation in electrical performance. Flexible FETs fabricated from these films demonstrated stable operation under strain, with mobility retention >95% even after repeated bending. This paves the way for wearable electronics and foldable displays with unprecedented durability.
PdSe2 has also shown exceptional promise in optoelectronic applications due to its strong light-matter interactions across a broad spectral range. Recent studies have reported a photoresponsivity of ~10⁴ A/W in PdSe2-based photodetectors operating in the visible to near-infrared spectrum (400–1550 nm), outperforming conventional materials like graphene (~0.01 A/W) and MoS2 (~10² A/W). The material's anisotropic optical properties, characterized by a dichroic ratio of ~1.5 at 532 nm, enable polarization-sensitive detection without additional filters. In 2023, researchers achieved record-breaking external quantum efficiency (EQE) values exceeding 300% in PdSe2 phototransistors by leveraging its high absorption coefficient (>10⁵ cm⁻¹) and efficient carrier multiplication effects.
The application of PdSe2 in quantum computing has gained traction due to its potential for hosting topological states and superconducting behavior. Recent experiments have demonstrated proximity-induced superconductivity in PdSe2 heterostructures with critical temperatures (Tc) up to 4 K when coupled with NbSe2 layers. Theoretical predictions suggest that strain engineering could further enhance Tc beyond 6 K by modulating the electron-phonon coupling strength. Additionally, angle-resolved photoemission spectroscopy (ARPES) studies have revealed Dirac-like surface states in few-layer PdSe2, hinting at potential topological insulator behavior under specific conditions.
Finally, PdSe2's compatibility with existing CMOS fabrication processes has been a game-changer for industrial adoption. In 2023, researchers successfully integrated PdSe2 into back-end-of-line (BEOL) processes at the 5 nm node, achieving device densities >10⁸/cm² with minimal parasitic capacitance (<1 fF/μm). This integration enabled the development of ultra-low-power logic circuits operating at sub-0.5 V supply voltages while maintaining switching speeds <10 ps per gate.
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