Indium selenide (InSe) has emerged as a transformative material in the field of next-generation electronics due to its exceptional electronic and optoelectronic properties. Recent breakthroughs in the synthesis of ultra-thin InSe layers have demonstrated carrier mobilities exceeding 10,000 cm²/Vs at room temperature, rivaling those of graphene and surpassing traditional semiconductors like silicon. This high mobility is attributed to the weak interlayer van der Waals forces and the absence of dangling bonds on its surface, which minimize scattering. Moreover, InSe exhibits a tunable bandgap ranging from 1.26 eV (bulk) to 2.11 eV (monolayer), making it highly versatile for applications in photodetectors, transistors, and solar cells. A recent study published in *Nature Nanotechnology* showcased InSe-based field-effect transistors (FETs) with an on/off ratio of >10⁸ and subthreshold swing as low as 60 mV/decade, setting new benchmarks for low-power electronics.
The integration of InSe into flexible and wearable electronics has been a major focus of recent research due to its mechanical robustness and high flexibility. Advanced fabrication techniques, such as chemical vapor deposition (CVD) and atomic layer deposition (ALD), have enabled the production of large-area, defect-free InSe films with thicknesses down to a single atomic layer. These films exhibit remarkable mechanical properties, with a Young’s modulus of ~100 GPa and fracture strains exceeding 5%, making them ideal for flexible substrates. A groundbreaking study in *Science Advances* demonstrated flexible InSe-based photodetectors with a responsivity of 10⁴ A/W and a response time of <1 ms, outperforming conventional flexible materials like MoS₂ and WS₂. These devices also maintained >90% performance after 10,000 bending cycles, highlighting their durability for wearable applications.
InSe has also shown immense potential in quantum electronics due to its strong spin-orbit coupling and valley-dependent properties. Recent experiments have revealed that monolayer InSe exhibits valley polarization lifetimes exceeding 1 ns at cryogenic temperatures, making it a promising candidate for valleytronics. Additionally, the material’s large exciton binding energy (~140 meV) facilitates stable excitonic states at room temperature, enabling novel quantum light-emitting devices. A study in *Physical Review Letters* reported the observation of room-temperature quantum coherence in InSe monolayers with coherence times up to 100 ps, paving the way for quantum information processing applications.
The environmental stability of InSe has been significantly improved through innovative encapsulation techniques using hexagonal boron nitride (hBN) or Al₂O₃ layers. These methods have extended the operational lifetime of InSe devices from hours to months under ambient conditions without compromising performance. For instance, encapsulated InSe FETs exhibited negligible degradation in mobility (<5%) after six months of exposure to air, as reported in *Advanced Materials*. This breakthrough addresses one of the major challenges facing two-dimensional materials and accelerates their commercialization.
Finally, InSe is being explored for energy storage applications due to its high theoretical capacity (~1,000 mAh/g) as an anode material in lithium-ion batteries. Recent work published in *Nano Energy* demonstrated that nanostructured InSe electrodes achieved a specific capacity of 950 mAh/g at a current density of 0.1 A/g with excellent cycling stability (>90% capacity retention after 500 cycles). These results highlight its potential to revolutionize energy storage technologies by offering higher energy densities compared to graphite-based anodes.
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