III-V nanowires (NWs) are emerging as a transformative platform for next-generation photovoltaics due to their superior light absorption properties and reduced material usage compared to bulk counterparts. Recent studies on GaAs NW arrays have demonstrated external quantum efficiencies (EQEs) >90% across a broad spectral range (300-900 nm), achieved through optimized antireflection coatings and radial junction designs. These structures enable solar cell efficiencies exceeding 30% under AM1.5G illumination while using <10% of the material required by traditional thin-film technologies.
The use of tandem NW architectures combining multiple bandgap materials such as InP/GaAs has pushed photovoltaic efficiencies beyond the Shockley-Queisser limit (>35%). Advanced growth techniques like selective area epitaxy ensure precise control over NW dimensions (±5 nm diameter variation), minimizing recombination losses at heterointerfaces (<10^12 cm^-3 defect density). Such tandem designs are particularly promising for space applications where high efficiency-to-weight ratios are critical.
Recent innovations in flexible NW-based solar cells have demonstrated bending radii <1 mm without performance degradation (<5% efficiency loss after 1000 cycles). This is achieved through transfer printing techniques that allow NW arrays to be integrated onto lightweight polymer substrates while maintaining excellent electrical connectivity (<0.1 Ω·cm contact resistance). Flexible NW solar cells are being developed for wearable electronics and portable power systems.
The incorporation of plasmonic nanostructures into III-V NW arrays has further enhanced light trapping capabilities leading short-circuit current densities >40 mA/cm² even under low-light conditions (<0 suns illumination equivalent). Plasmonic effects also enable sub-bandgap photon absorption extending into infrared wavelengths (>1100 nm), opening new possibilities spectrum utilization beyond conventional limits.
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