Quantum defects in carbon nanotubes (CNTs) have emerged as a promising platform for quantum computing due to their long coherence times and tunable electronic properties. Recent studies have demonstrated coherence times exceeding 100 µs at room temperature, rivaling traditional solid-state qubits like nitrogen-vacancy centers in diamond. These defects, often introduced via chemical functionalization or irradiation, exhibit spin-photon interfaces with photon emission rates of up to 10^6 s^-1, enabling efficient quantum communication. The ability to integrate CNTs into scalable architectures further enhances their potential for large-scale quantum networks.
The precise control of defect placement within CNTs has been achieved using advanced techniques such as atomic force microscopy (AFM) and electron beam lithography (EBL), with spatial resolution down to 1 nm. This level of control allows for the creation of defect arrays with inter-defect distances as low as 10 nm, facilitating strong dipole-dipole interactions essential for multi-qubit operations. Theoretical models predict coupling strengths of up to 1 GHz between adjacent defects, enabling fast gate operations. Experimental validation of these predictions is ongoing, with recent results showing fidelity rates above 99% for single-qubit gates.
The integration of CNT-based qubits with photonic circuits has been demonstrated using silicon nitride waveguides, achieving coupling efficiencies of over 90%. This integration is critical for the development of hybrid quantum systems that combine the advantages of solid-state qubits with photonic interconnects. Additionally, the use of strain engineering to tune the optical transition frequencies of defects has been shown to enable wavelength-matching with telecom bands (1550 nm), a key requirement for long-distance quantum communication. Recent experiments have achieved strain-induced frequency shifts of up to 100 GHz using piezoelectric actuators.
The scalability of CNT-based quantum systems is further enhanced by their compatibility with existing semiconductor fabrication techniques. Recent work has demonstrated the integration of CNT qubits on silicon substrates using CMOS-compatible processes, paving the way for hybrid quantum-classical computing architectures. The use of graphene electrodes for electrical control has also been explored, achieving gate voltages as low as 0.1 V for single-qubit operations. These advancements position CNT-based quantum defects as a leading candidate for next-generation quantum technologies.
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