Tandem Solar Cells: Beyond the Shockley-Queisser Limit

Tandem solar cells, combining multiple absorber layers, have surpassed the Shockley-Queisser limit for single-junction devices, achieving record PCEs of 33.7% in perovskite-silicon tandems and 39.5% in III-V multi-junction cells under concentrated sunlight. These devices leverage complementary bandgaps to maximize photon utilization across the solar spectrum. For example, a perovskite top layer with a bandgap of ~1.68 eV paired with a silicon bottom layer (~1.12 eV) captures photons more efficiently than standalone cells.

The development of transparent conductive oxides (TCOs) and recombination layers has been critical for tandem cell efficiency. Indium tin oxide (ITO) with sheet resistances below 10 Ω/sq and optical transmittance >90% ensures minimal losses at interlayer junctions. Advanced recombination layers using MoOx/Ag/MoOx stacks have reduced series resistance to <0.5 Ω·cm² while maintaining high optical transparency (>95%) across visible and near-infrared wavelengths.

Scalability remains a challenge due to the complexity of multi-layer fabrication processes. Recent advances in monolithic integration techniques have enabled tandem cell production on large-area substrates (>200 cm²) with PCEs exceeding 28%. Additionally, the use of low-temperature processing (<150°C) for perovskite top layers has improved compatibility with silicon bottom cells without compromising performance.

Economic viability is a key consideration for tandem cell adoption. Lifecycle cost analyses suggest that perovskite-silicon tandems could achieve levelized costs of electricity (LCOE) below $0.03/kWh by leveraging existing silicon manufacturing infrastructure while reducing material costs through thin-film deposition techniques.

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