Quantum spin transport in graphene-based heterostructures has emerged as a frontier area for spintronics, offering unprecedented control over electron spin states. Recent studies have demonstrated room-temperature spin lifetimes exceeding 10 nanoseconds in graphene encapsulated by hexagonal boron nitride (hBN), with spin diffusion lengths reaching up to 30 micrometers. This is attributed to the ultra-low spin-orbit coupling (~10 µeV) and high carrier mobility (>200,000 cm²/Vs) in such systems.
The integration of transition metal dichalcogenides (TMDs) with graphene has further enhanced spin-to-charge conversion efficiencies, with reported values of up to 40% at room temperature. These heterostructures leverage proximity-induced spin-orbit coupling (~1 meV) while maintaining graphene's exceptional electronic properties. Such systems are pivotal for developing next-generation spin-logic devices and quantum computing architectures.
Recent advances in twistronics—engineering the twist angle between graphene layers—have revealed tunable spin transport properties. For instance, a magic angle of 1.1° in twisted bilayer graphene induces flat bands, leading to correlated insulating states and superconductivity, which can be exploited for spin-polarized transport. This opens new avenues for exploring exotic quantum phenomena in carbon-based materials.
The development of non-local spin valve geometries has enabled precise measurement of pure spin currents without charge current interference, achieving spin Hall angles of ~0.1 in graphene-TMD heterostructures. These advancements are critical for realizing energy-efficient spintronic devices with minimal Joule heating.
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