Topological Insulators Based on III-V Bismuth Compounds

III-V bismuth compounds like InBi and GaBi have emerged as promising candidates for topological insulators due to their strong spin-orbit coupling (SOC) and band inversion properties. Theoretical calculations predict bandgaps up to 300 meV in these materials, making them suitable for room-temperature applications. Experimental validation using angle-resolved photoemission spectroscopy (ARPES) has confirmed the existence of Dirac surface states with Fermi velocities exceeding 5×10⁵ m/s. These properties enable robust edge conduction even in the presence of defects or impurities.

The integration of III-V bismuth topological insulators with superconducting materials has opened new possibilities for Majorana fermion research. Proximity-induced superconductivity in InBi-based heterostructures has been observed at temperatures up to 4 K, with coherence lengths around 100 nm. This platform provides a promising route for realizing topological qubits with non-Abelian statistics, which are essential for fault-tolerant quantum computing architectures. Moreover, the tunability of SOC strength via strain engineering allows precise control over Majorana bound states' localization and coupling energies.

Recent advances in nanofabrication techniques have enabled the creation of nanoribbons and nanowires from III-V bismuth compounds with widths below 50 nm. These nanostructures exhibit quantized conductance steps at low temperatures (<1 K), consistent with topological edge states' predictions. Additionally, gate-tunable transport measurements have demonstrated mobilities exceeding 10⁴ cm²/Vs, rivaling those of graphene-based devices but with added robustness against backscattering due to time-reversal symmetry protection.

The application of III-V bismuth topological insulators in spintronics is gaining traction due to their ability to generate pure spin currents without charge flow via the spin Hall effect (SHE). Experimental setups have achieved SHE efficiencies greater than 0.5 at room temperature using GaBi thin films grown by MBE on lattice-matched substrates like InP(001). This efficiency surpasses traditional heavy metals like Pt or Ta by a factor of two while offering better compatibility with existing semiconductor manufacturing processes.

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