HgTe/CdTe heterostructures have emerged as a platform for realizing two-dimensional topological insulators (2D TIs) with robust edge states protected by time-reversal symmetry. Experimental measurements show quantized conductance of e²/h at temperatures up to 30 K, making these materials promising for low-power spintronic devices. The use of molecular beam epitaxy (MBE) has enabled atomic-level control over interface quality, reducing defect densities to <10⁹ cm⁻².
The integration of HgTe/CdTe TIs with superconducting electrodes has demonstrated proximity-induced superconductivity with critical temperatures (Tc) up to 1 K. This has enabled the observation of Majorana zero modes, a key ingredient for topological quantum computing. The use of in-situ cryogenic scanning tunneling microscopy (STM) has provided direct evidence of these exotic states with spatial resolution <0.1 nm.
Recent theoretical predictions suggest that strain engineering can enhance the bandgap of HgTe/CdTe TIs from ~10 meV to >50 meV, improving their operational temperature range. Experimental validation using piezoelectric substrates has shown promise, with strain-induced bandgap tuning achieved at rates of ~1 meV/%. This could enable room-temperature TI-based devices for practical applications.
Efforts to scale up production have focused on van der Waals epitaxy techniques, enabling the growth of HgTe/CdTe heterostructures on graphene substrates with minimal lattice mismatch (<0.5%). This approach reduces production costs by up to 40% while maintaining high material quality.
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