Ultra-wide bandgap (UWBG) semiconductors like gallium oxide (Ga₂O₃), aluminum nitride (AlN), and diamond are emerging as key materials for high-power electronics. Ga₂O₃ boasts a bandgap of ~4.8 eV and a critical electric field strength of ~8 MV/cm, enabling breakdown voltages exceeding 3 kV in devices <100 µm thick. Recent studies have demonstrated Ga₂O₃-based Schottky diodes with specific on-resistances as low as 0.1 mΩ·cm², outperforming silicon carbide (SiC) and gallium nitride (GaN).
AlN’s bandgap of ~6.2 eV makes it ideal for deep-UV optoelectronics, with external quantum efficiencies >20% reported for LEDs emitting at wavelengths <250 nm. Diamond, with its bandgap of ~5.5 eV and thermal conductivity >2,000 W/mK, is being explored for high-power RF amplifiers operating at frequencies >100 GHz. However, challenges in doping diamond persist, with boron-doped diamond achieving hole mobilities ~2,000 cm²/Vs but limited by acceptor activation energies ~0.37 eV.
The growth of UWBG materials via epitaxial techniques has seen significant progress. Metal-organic chemical vapor deposition (MOCVD) has enabled the growth of β-Ga₂O₃ films with dislocation densities <10⁶ cm⁻² on sapphire substrates. Similarly, plasma-assisted molecular beam epitaxy (MBE) has produced AlN films with threading dislocation densities <10⁸ cm⁻² on silicon substrates. These advancements are crucial for device scalability and reliability.
Recent innovations include the development of Ga₂O₃-based vertical transistors with current densities >1 kA/cm² and switching frequencies >1 MHz. Diamond-based field-effect transistors have demonstrated output powers >3 W/mm at 10 GHz, highlighting their potential for next-generation RF systems.
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